国家/地区 韩国（5）
IPC部 B（5）
IPC大类 C01（5） B01（3） B32（2）
IPC小类 C01B（5）
IPC C01B031/02（5）
发明人 PARK W（5）
公开年 2013（4）
申请年 2012（5）
专利权人 LG ELECTRONI.（5）

Manufacture of graphene involves forming graphene layer on catalyst metal layer, forming protective layer on graphene layer, positioning support layer on protective layer and then removing catalyst metal layer.

JUNG M, PARK W, RHO J, MOON J

Device used for manufacture of graphene, has chamber having inlet portion, and exhaust portion, substrate positioned within chamber and heating unit.

PARK W, JUNG M, RHO J, SEO B, MOON J

Apparatus, useful for growing graphene that is used in display device, comprises substrate positioned within chamber, heating portion heating substrate, and supply unit supplying induced current to heating unit.

PARK W, JUNG M, RHO J, SEO B, MOON J

Device, useful for producing graphene, comprises a current supply unit for supplying current to a formation area through a contact unit, and a storage unit that receives metal catalyst in roll state, where contact unit contacts chamber.

RHO J, PARK W, JUNG M, SEO B, MOON J

Producing a doped graphene, used in e.g. auxiliary electrode, comprises forming doped graphene layer, positioning support layer, removing metal layer, adding dopants and positioning substrate layer and then removing support layer.

RHO J, LEE S, JUNG M, MOON J, SEO B, PARK W