国家/地区 韩国（3）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B031/02（3）
发明人
公开年 2013（2）
申请年 2012（3）
专利权人

Manufacturing graphene involves preparing a carrier member on which the graphene is formed on one surface, exposing the graphene to dopant vapor, transferring the doped graphene onto a target member, and removing the carrier member.

YOON J, YOON J H

Manufacture of boron-doped reduced graphene oxide used for electrode of capacitor, involves dispersing graphene oxide into aqueous solvent, adding borane-tetrahydrofuran to obtained dispersion solution, then refluxing, and cooling.

PARK S, HAN J W

Graphene, used in electronic device such as organic LED, LED, plasma display panel and solar cell device, comprises graphene surface doped with transition metal dopants including iridium, molybdenum, osmium, rhodium, gold and palladium.

CHOI K S, KIM S Y, KWON G C