国家/地区 中国（3）
IPC部 C（3）
IPC大类 C01（3） C30（3） C23（2）
IPC小类 C01B（3）
IPC C01B031/04（3）
发明人 DENG P（2） GUO H（2） LEI T（2）
ZHANG K（2） ZHANG Y（2）
公开年 2012（3）
申请年 2012（3）
专利权人 UNIV XIDIAN（2）

Preparation of structured graphene at 3C-silicon carbide substrate for preparing microelectronic device, by placing washed silicon substrate in chemical vapor deposition system, vacuumizing, heating, introducing propane, and carbonizing.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG C, ZHANG F

Copper foil used for manufacturing graphene, has glossiness or more than preset value, and average grain size more than preset value after being heated in atmosphere containing hydrogen and argon at specific conditions.

CHIBA YOSHIHIRO, CHIBA Y, YOSHIHIRO C, CHIBA G

Preparation of large-area graphene used for sealing gas or liquid, by vacuumizing cleaned silicon substrate in chemical vapor deposition system in presence of hydrogen, carbonizing, introducing propane to form carbide layer, and heating.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y