国家/地区 韩国（2）
IPC部 C（2）
IPC大类 C30（2）
IPC小类 C30B（2）
IPC C30B029/36（2）
发明人 CHOI J W（2）
公开年 2014（2）
申请年 2013（2）
专利权人 UNIV KYUNGHE.（2）

Growing graphene on a substrate, comprises forming a metal oxide layer on substrate using reactive metal oxide to prepare structure, and growing graphene by heat treatment, while exposing the structure to gas containing carbon.

CHOI J W

Growing etching free graphene useful in transparent semiconductor device, comprises preparing a structure comprising conductive metal oxide layer formed on a substrate and exposing structure to gas and growing graphene on layer by heating.

CHOI J W