国家/地区 韩国（3）
IPC部 C（3）
IPC大类 C30（3） C01（2）
IPC小类 C30B（3）
IPC C30B025/18（3）
发明人
公开年 2014（2）
申请年 2013（3）
专利权人

Graphene film used in an electrode is obtainable by epitaxially growing metal layer on surface of substrate, peeling off the metal layer, and depositing graphene onto surface of metal layer.

WODTKE A, YU H K, ALEC W, HAK KI Y, YU H, YUK H K, YUK H

Growing etching free graphene useful in transparent semiconductor device, comprises preparing a structure comprising conductive metal oxide layer formed on a substrate and exposing structure to gas and growing graphene on layer by heating.

CHOI J W

Producing two-dimensional nanomaterial (graphene) by chemical vapor deposition, used in e.g. display, comprises contacting substrate with flow of hydrogen and flow of precursor such that precursor forms material on surface of substrate.

GROBERT N, MURDOCK A T, KOOS A A