国家/地区 欧洲专利局（EPO）（2）
IPC部 C（2）
IPC大类 C30（2） H01（2）
IPC小类 C30B（2）
IPC H01L021/02（2）
发明人
公开年 2013（2）
申请年 2013（2）
专利权人

Preparing multilayer article from semiconductor substrate involves forming metal film on front of substrate; forming layer of boron nitride; and forming layer of graphene between substrate and the back metal film surface.

SEACRIST M R, BERRY V, NGUYEN P T

Formation of graphene film on surface of substrate for, e.g. lasers, involves locating carbon source at substrate surface, controlling ambient conditions to inhibit nucleation, and then initiating graphene nucleation at localized site.

DONG G