国家/地区 美国（3）
IPC部 C（4） H（2）
IPC大类 C01（4）
IPC小类 C01B（4） C23C（4） C30B（4）
H01L（2）
IPC C23C016/26（4）
发明人
公开年 2015（2）
申请年 2014（4）
专利权人

Producing single or multi layered graphene-containing carbon structures on a surface of grains of copper powder and/or its alloy comprises e.g. mixing copper or its alloy powder and inert powder, and annealing at a fluidized temperature.

BABUL T, OBUCHOWICZ Z, KOWALSKI S, BLASZCZYK J

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Formation of graphene-boron nitride interface used in e.g. formation of graphene-boron nitride heterostructure, involves exposing ruthenium substrate to ethylene, and sequentially exposing resultant substrate to oxygen and borazine.

SUTTER P W, SUTTER E A

Method for growing graphene layer on metal foil for e.g. forming field-effect transistor, involves positioning foil in vessel placed in chamber, introducing hydrogen, annealing foil, introducing methane and depositing carbon on foil.

ZHOU C, ZHANG Y, ZHANG L