国家/地区 中国（7）
IPC部 C（5） B（4） H（2）
IPC大类 B82（3） C01（3） B01（2）
H01（2）
IPC小类 B82Y（3） C01B（3）
IPC B82Y030/00（3） B82Y040/00（3） C01B031/04（3）
C01B032/184（2）
发明人 WANG Y（8）
公开年 2016（8）
申请年 2014（8）
专利权人 UNIV NANJING.（2）

Method for preparing graphene oxide-supported spherical dendritic platinum nano-composite material involves adding deionized water to graphene oxide nanosheets, ultrasonically dispersing and adding chloroplatinic acid salt and ascorbic acid.

MENG X, WANG X, WANG Y, TANG S, LI N

Application of graphene oxide as protein adsorption dielectric material comprises proteinaceous material and protein.

LI J, WANG Y, XING G, YAN L

Preparation of graphene used as electrode material of supercapacitor, involves carrying out oxidation of graphite twice using natural flake graphite and oxidizing agent, washing, drying and re-dispersing in concentrated sulfuric acid.

JIA Z, QI T, WANG Y

Preparation of graphene, involves mixing inorganic salt with phthalocyanine material uniformly, splitting and separating under protecting gas to obtain highly plane oriented graphene material.

SUN X, WANG Y, DONG G

Polypyrrole/iron(II,III) oxide/redox graphene ternary complex wave-absorbing material comprises intermediate layer including iron(II,III) oxide/redox graphene and outer layer including polypyrrole.

JIANG W, PENG Z, WANG Y, ZHONG S, LIU G

Absorbing material comprises core-shell structure of silver/iron oxide nano-composites in which silver forms the nucleus and iron forms the shell and is prepared by reduction of graphene oxide.

JIANG W, WANG Y, ZHANG N, ZHONG S, LIU G

Sound insulation material sheet, has waterproof layer formed between sound-insulating layer and support frame, and intermediate layer formed on polystyrene foam board, where sound-insulating layer is fixed with graphene sponge.

WANG Y

Epitaxial growth of graphene junction on semi-insulating silicon carbide wafer surface for e.g. multipolar device, involves cleaning semi-insulating silicon carbide wafer surface, implanting boron ion on wafer and annealing wafer.

CHEN X, GUO L, JIA Y, WANG Y