国家/地区 中国（2） 日本（2） 韩国（2） 美国（2）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C23C016/01（3）
发明人
公开年 2017（2）
申请年 2016（3）
专利权人

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J

Graphene film used for manufacture of composite for transistor, has wrinkle density of less than preset value.

AOTA N, AIDA H

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M