国家/地区 日本（2）
IPC部 C（2）
IPC大类 C01（2） C23（2） C30（2）
IPC小类 C01B（2）
IPC C23C014/14（2）
发明人
公开年 2017（2）
申请年 2016（2）
专利权人

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J

Composite used for electrode of transistor used in flexible device, consists of single crystal sapphire substrate having dislocation density less than preset value, metal film grown on substrate, and graphene film grown on metal film.

AOTA N, AIDA H