国家/地区 中国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人 ZHANG C（2）
公开年 2018（2）
申请年 2018（2）
专利权人 UNIV XIDIAN（2）

Method for preparing graphene intercalation structured-gallium nitride-based LED device, involves magnetron sputtering aluminum nitride film on sapphire substrate, followed by allowing to high temperature annealing alloying.

NING J, ZHANG C, WANG D, ZHANG J, SHEN X, CHEN Z, MA P, HAO Y

Method for preparing gallium nitride based photoelectric detector, involves magnetron sputtering aluminum nitride film on sapphire substrate and growing single layer of graphene on copper substrate by chemical vapor deposition.

NING J, SHEN X, WANG D, ZHANG J, ZHANG C, CHEN Z, MA P, HAO Y