国家/地区 中国（4）
IPC部 C（4）
IPC大类 C23（4）
IPC小类 C23C（4）
IPC
发明人 SUN Q（3） YE X（3） FENG L（2）
HOU X（2） QIANG H（2） SUO G（2）
YANG Y（2） ZHANG L（2）
公开年 2021（4）
申请年 2021（4）
专利权人 UNIV SHAANXI SCI TECHNOLOGY（4）

Method for in-situ growth of graphene in high-voltage direct current air switch, involves preparing raw material composition, using plasma alloying process and pre-coating solid carbon source on surface of nickel/copper contact material.

ZHANG K, YE X, SUN Q

Preparation of nickel sulfide electrocatalyst used for preparing hydrogen, involves dispersing nickel source and graphene oxide in ethylene glycol, and thermally reacting thioacetamide and reduced graphene oxide/nickel hydroxide compound.

YU Y, LIN S, SUN D, XU B, MENG F, CHU W, REN J, HUANG L

Preparing graphene/metal-based composite contact based on tubular furnace heating, involves heating metal contact material in protection of argon gas to realize in-situ growing graphene, and cooling to obtain composite contact.

YE X, SUN Q, QIANG H, SUO G, FENG L, HOU X, YANG Y, ZHANG L

Secondary growing of graphene on metal surface comprises e.g. growing graphene film in situ on surface of metal substrate by using laser method, infiltrating carbon source into metal substrate, destroying graphene film, and heating.

YE X, QIANG H, SUN Q, JING D, YANG Y, ZHANG L, SUO G, FENG L, HOU X