国家/地区 中国（2） 韩国（2）
IPC部 B（4）
IPC大类 B01（4）
IPC小类 B01J（4）
IPC C01B032/194（4）
发明人
公开年 2022（3）
申请年 2021（4）
专利权人

Direct growth method of multilayer graphene through pressure heat treatment, comprises forming etch stop layer, forming metal catalyst layer, forming amorphous carbon layer and directly growing multilayer graphene on seed layer.

KIM H, KIM S K, MI K H, YOO C S, JOJINWOO, KIM H Y, JEONJUNHYUCK, YUNSUNGHO, SUNG K H, LEE S M

Manufacturing graphene wrinkles using three-dimensional structure patterning process comprises etching transition metal thin film to form three-dimensional pattern and inserting into chemical vapor deposition chamber to synthesize graphene.

KIM J, WIMALANANDA M D S, LEE J M

Preparing nitrogen-doped modified graphene electrode material useful for absorbing electroreduction radionuclides, comprises e.g. mixing graphite powder and sodium nitrate with concentrated sulfuric acid, heating and stirring with potassium permanganate, stirring with hydrogen peroxide.

DING A, TENG Y, SHAO K, DOU J, GUO Y

Container for storing one or more items, comprises surface defining volume of the container, label comprises substrate, multiple of carbon-based sensors printed on substrate and collectively configured to detect presence of analytes.

GIBBS G C, COOK D, VANHEUSDEN K, CHMIOLA J, LIM S H, LANNING B, STOWELL M W, GHEZELBASH H, CHANG C, KUMAR A, SINGH S, VANHUESDEN K