国家/地区 美国（3）
IPC部 B（3）
IPC大类 C30（3） C01（2） H01（2）
IPC小类 C30B（3）
IPC C30B029/02（2）
发明人
公开年 2021（3）
申请年 2021（3）
专利权人

Formation of two-dimensional silicon carbide used as wide band gap semiconducting material in electronic applications, involves preparing solution comprising silicon carbide particles and solvent, ultrasonically processing solution, and centrifuging to extract two-dimensional silicon carbide.

CHABI S

Fuel cell e.g. proton exchange membrane fuel cell, comprises core-shell nanostructure comprising palladium nano-substrate having cubic shape coated with uniform atomic overlayers of epitaxially deposited zero-valent platinum atoms.

ZHANG L, PARK J, WANG X, CHOI S, XIE S, XIA Y

Fabrication of graphene used for electrode of e.g. sandwich-style capacitor, involves providing patterned substrate, depositing graphene oxide on patterned substrate, and reducing graphene oxide to graphene.

CHAICHI A, GARTIA M R