国家/地区 中国（6）
IPC部 B（6）
IPC大类 B21（6）
IPC小类 C01B（6）
IPC B21B003/00（5） C01B032/186（5） B21B045/00（4）
B21B001/40（3） B21B015/00（3） B30B003/04（3）
B21B009/00（2） C22C001/10（2） C22C009/00（2）
C23C016/26（2） C23C016/56（2）
发明人 DUAN Y（5） LI X（5） SHAO L（5）
SHI H（5） HUANG D（4） LI Z（3）
ZHANG Y（3） JIANG H（2） MA J（2）
XU X（2） YU J（2）
公开年 2022（5）
申请年 2022（6）
专利权人 CHINESE ACAD.（5） CHONGQING GR.（5）

Preparing copper-graphene composite material involves utilizing mechanical alloying method to prepare copper and polymer powder to obtain copper-polymer powder, cold isostatic pressing copper polymer powder to get bar melting region to bar porous rod material.

LIANG J, ZHANG X, WANG D, LI X, ZHOU S, GUO G, BAO F

Growth forging split device for graphene metal composite material, comprises growth chamber, forging chamber and transfer mechanism for transferring metal material, where growth chamber and forging chamber are inside with heating system.

SHAO L, HUANG D, DUAN Y, JIANG H, MA J, XU X, SHI H, LI X, YU J

Method for performing plasma-preparation of high-conductivity graphene metal composite material for use in electric appliance and electronic fields, involves growing graphene on metal base material under plasma condition to obtain metal substrate.

SHAO L, LI X, ZHANG Y, LI Z, DUAN Y, HUANG D, SHI H

Growing and rolling graphene-enhanced high-conductivity metal material involves carrying out graphene growth and roll formation in the same chamber.

SHAO L, HUANG D, DUAN Y, JIANG H, MA J, YU J, XU X, LI X, SHI H

Preparing graphene metal layered composite material useful in aerospace industry, aviation industry and information industry, comprises pre-treating solid carbon source, growing graphene on many metal substrates and hot-pressing many graphene metal substrates.

SHAO L, LI X, ZHANG Y, LI Z, HUANG D, SHI H, DUAN Y

Method for manufacturing graphene metal layered composite material, involves obtaining metal matrix composite material and graphene metal layered composite material, and finishing graphene growth and hot-pressing molding process in same sealing chamber.

SHAO L, DUAN Y, SHI H, ZHANG Y, LI Z