国家/地区 韩国（2）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC
发明人 KIM S（2）
公开年 2023（2）
申请年 2022（2）
专利权人

Silicon-based nanosheet produced by acid-treating metal-layered silicon-based compound to prepare proton-layered silicon-based compound, and exfoliating, useful in composite sheet for electronic devices, and supercapacitor.

KIM S, SEUNGBO K, JUNG H J

Interconnect structure for electronic device, comprises first dielectric layer including trench, conductive wire filling inside of trench, first cap layer on top surface of conductive wire, first cap layer including doped graphene, and doped graphene being graphene doped with group fifth element.

JUNG A, KIM S, SHIN K, SHIN K W, KIM S T, JUNG A R