国家/地区 中国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人 MA L（2）
公开年 2023（2）
申请年 2023（2）
专利权人 UNIV TIANJIN（2）

Method for preparing carbonaceous insulating layer of electron beam induced photoresist growth, involves utilizing organic solution to clean substrate by electron beam and wash photoresist solid film, and forming carbonaceous insulating layer after leaving electron beam irradiation under substrate.

HAO L, LI R, YU K, TIAN H, MA L

Integrated vertical device obtained by directly interconnecting capacitor coupling in semiconductor field, has a silicon carbide substrate for using natural bonding generated by graphene-silicon carbide epitaxy system during epitaxial growth process.

JI P, ZHANG K, ZHANG Z, LI R, MA L