国家/地区 中国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC H01L033/00（2）
发明人 JIN C（2）
公开年 2023（2）
申请年 2023（2）
专利权人 JIANGXI MTC .（2）

Preparing epitaxial wafer used in LED chip, involves providing substrate, growing aluminum nitride layer on substrate sequentially buffer layer, and introducing hydrogen and nitrogen to perform surface treatment to layer before growing buffer layer.

GU W, JIN C, HU J, LV M, LIU C

Silicon-based UV-LED epitaxial structure, comprises buffer layer provided with silicon dioxide layer, silicon nitride layer, graphene layer, and aluminum nitroxide layer that are sequentially arranged on silicon substrate.

JIN C, HU J, LIU C, GAO H, ZHENG W, CHENG L