国家/地区 德国（2）
IPC部 H（2）
IPC大类
IPC小类
IPC
发明人
公开年 2013（2）
申请年 2012（2） 
专利权人 BOSCH GMBH ROBERT（2）

Power transistor e.g. vertical MOSFET, has graphene layer that is formed on source regions and is partially overlapped with the gate electrode so that ducts are formed on graphene layer.

RAMBACH M

Ultrasonic wave producing and detecting arrangement structure for e.g. parking sensor of motor car, has one graphene protecting layer that is formed at one electrical conductive element provided at one side of piezoelectric layer.

SEITER M, GERLACH A