国家/地区 台湾（3）
IPC部 H（2）
IPC大类 H01（2）
IPC小类
IPC
发明人 CHEN C（3）
公开年
申请年
专利权人 CHEN C（3）

Multilayer Silicon/graphene composite anode structure for half and full lithium-ion cells, has graphene thin film deposited onto amorphous phase upper silicon thin film of Silicon/graphene unit layer, where layer is deposited on substrate.

TATSUHIRO M, CHEN C, HUNG T, MOHAMED S G, LIU R, HU S, LIN H, LIN Y, SUNG C, HWANG B, CHEN Z, HONG T, HUANG B, SEN D, SHAD M, SONG J, CHEN C J, HUNG T F, LIU R S, HU S F, LIN H Z, LIN Y Q, SUNG C M, HWANG B J

Graphene transistor, useful as e.g. bottom-gate transistor, comprises two doping layers that is disposed on graphene layer or beneath graphene layer for providing dopants for graphene layer and comprises nonstoichiometric compounds.

CHEN C, HO P, CHEN C W, HO P H

Method of fabricating flexible microelectrode for detecting neural signals, by growing graphene electrode layer on temporary substrate, and growing flexible substrate grown on graphene electrode layer.

YAO D, CHEN C