国家/地区 美国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC H01L029/16（2）
发明人 HAN S（2）
公开年
申请年
专利权人 CHEN Z（2）

Local dual gates graphene based electronic device i.e. FET, for amplifying, switching and detecting signals during fabrication of integrated circuit, has local gate for forming gate elements to locally control portion of graphene layer.

CHEN Z, FRANKLIN A D, HAN S

Plate varactor for integrated circuit used as part of electronic product has single layer of graphene material disposed over first electrode in contact with dielectric layer to contribute quantum capacitance component to dielectric layer.

CHEN Z, HAN S, KOSWATTA S O, VALDES G A