国家/地区 中国（2）
IPC部
IPC大类
IPC小类
IPC
发明人
公开年 2012（2）
申请年
专利权人 CHINESE ACAD SCI PHYSICS INST（2）

Growing graphene on silicon carbide substrate epitaxially involves adopting formation technology imaging substrate, on surface of substrate, forming graphic array, performing thermal decomposition to patterned substrate and forming graphene.

CHEN X, GUO L, JIA Y, LI K, LIN J, WANG G, WANG W

Graphene nano pattern processing method, involves forming manual defect hole on graphene, performing anisotropic etching on graphene by utilizing hydrogen-containing plasma, and arranging hole in lattice diagram.

ZHANG L, ZHANG G, SHI Z, YANG R, SHI D