国家/地区 中国（3）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人 WANG H（3）
公开年 2013（2）
申请年 2012（3） 
专利权人 CHINESE ACAD SCI SHANGHAI MICROSYSTEM（3）

Graphene field effect device preparing method, involves forming source electrode and drain electrode in graphene field effect device structure, and connecting source electrode and drain electrode with graphene.

KANG X, LIU X, SUN Q, WANG H, XIE H, XIE X

Manufacture of gate dielectric thin film on graphene surface involves introducing graphene into molecular beam epitaxy chamber kept at preset temperature and pressure, and passing metal vapor stream and oxidant gas stream.

SHEN D, WANG H, XIE X, YANG X, ZHANG Y

Preparation of graphene by selecting substrate material, depositing directly catalyst and tetrabromomethane on substrate surface, and annealing substrate.

DI Z, DING G, GONG Q, LIU Q, WANG H, WANG S, XIE X