国家/地区 韩国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人
公开年
申请年 2011（2）
专利权人 ELECTRONICS TELECOM RES INST（2）

LED, has transparent electrode positioned on current spreading layer, P-type contact part positioned on transparent electrode, and N-type electrode positioned on N-type semiconductor layer, where transparent electrode is made of graphene.

YOUN D H, CHOI S Y, CHOI H, KIM J

Manufacture of via electrode involves forming via hole at substrate, forming catalyst layer at sidewall and bottom of via hole, and forming graphene layer in via hole by exposing the catalyst layer to solution mixed with graphene particles.

KIM D, BAEK K, PARK K, PARK J M, KIM Z S, KIM J Y, JEONG Y S, DO L, KIM D P, BAEK K H, DO LEE M