国家/地区 日本（2）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC
发明人
公开年 2013（2）
申请年 2012（2）
专利权人 FUJITSU LTD（2）

Electronic device e.g. metal oxide-Semiconductor field effect transistor, consists of graphene and carbon nanotube which are electrically connected through catalyst metal.

KAWABATA A

Processing of graphene sheet-type material used for e.g. semiconductor device, involves irradiating ultraviolet-ray to surface of graphene sheet-type material in atmosphere containing active substance and modifying surface layer.

ASANO T