国家/地区 日本（3） 美国（2） 世界知识产权组织（2）
IPC部 H（3） B（2） C（2）
IPC大类 C01（2） H01（2）
IPC小类 C01B（2） H01L（2）
IPC C01B031/04（2）
发明人
公开年 2010（3）
申请年 2009（2） 
专利权人 FUJITSU LTD（3）

Graphite structure of electronic component e.g. thermoelectric conversion element, has domains that are formed by laminated structure of graphene sheet that are arranged in plane, such that adjacent domains are connected.

KONDO D, SATO S, IWAI T

Processing of graphene sheet material during manufacture of electronic device, involves inactivating edge portion of graphene sheet material by irradiating material with ultraviolet light in atmosphere containing substance.

ASANO K

Bipolar FET e.g. e.g. bipolar graphene channel FET used in semiconductor integrated circuit device e.g. common-source circuit, has voltage application device which changes polarity of transistor, from direction of gate electrode.

HARADA N