国家/地区 韩国（4） 中国（2） 美国（2）
IPC部 C（3） H（3） B（2）
IPC大类 H01（3） B01（2） C01（2）
IPC小类 H01L（3） C01B（2）
IPC C01B032/186（2） H01L021/324（2）
发明人 HAM M（4）
公开年
申请年 2018（2） 
专利权人 GWANGJU INST SCI TECHNOLOGY（4）

Graphene oxide membrane film comprises multiple stacked graphene oxide layers, and first cross-linking agent and second cross-linking agent which are intercalated between stacked graphene oxide layers to chemically bond with graphene oxide.

HAM M, JANG J W

Manufacturing graphene directly on a substrate without transfer process used in semiconductore devices involves forming a catalyst layer on the substrate, using chemical vapor deposition to inject a carbon compound onto the catalyst layer.

HAM M, SON M W

Formation of metal-graphene hetero-junction metal interconnect for semiconductor device, involves depositing carbon source on substrate, depositing metal catalyst layer on carbon source layer, and heat treating substrate to form graphene.

HAM M, SON M, HAM M H, MYUNGWOO S, XIAN W, SUN M

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M