国家/地区
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人 JUNG G Y（2） PARK Y S（2）
公开年 2014（2）
申请年 2012（2）
专利权人 GWANGJU INST SCI TECHNOLOGY（2）

Method for manufacturing graphene nano array and field-effect transistor including graphene nano array, involves forming graphene nano array on protective layer etched along nanotube pattern and graphene sheet, and substrate is prepared.

JUNG G Y, PARK Y S

Manufacturing graphene nanoarray used as channels of field-effect transistor, comprises forming protective layer, sacrificial layer and resist layer on substrate having graphene sheet, and etching sacrificial layer and protective layer.

JUNG G Y, PARK Y S