国家/地区 韩国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人 LEE B H（2）
公开年 2013（2）
申请年 2012（2） 
专利权人 GWANGJU INST SCI TECHNOLOGY（2）

Method for transferring graphene thin film for electric component, involves attaching supporting thin film to graphene film formed on substrate, removing substrate, and forming device including thin film attached with graphene film.

LEE K, KAHNG Y H, LEE J, LEE B H, LEE K H, LEE J H

Flash memory device, has ferroelectric layer arranged between graphene layer and programming electrode, source electrode arranged in end part of graphene layer, and drain electrode arranged in another end of graphene layer.

HWANG H J, LEE B H