国家/地区 美国（6） 台湾（5） 中国（3） 日本（3）
IPC部 H（6） C（3）
IPC大类 H01（5）
IPC小类 H01M（5）
IPC H01M004/62（5） H01M004/36（4） H01M010/0525（4）
H01M004/02（3） H01M004/13（3） H01M004/134（3）
H01M004/66（3） H01M010/0562（3） H01M010/0566（3）
H01M004/131（2） H01M004/139（2） H01M004/38（2）
H01M004/505（2） H01M004/525（2） H01M004/58（2）
发明人 CHEN L（4） CHEN C（3） CHANG C（2）
CHEN C C（2） CHEN Z（2） FANG C（2）
HUANG Y（2） LI Y（2） WANG T（2）
WU W（2）
公开年 2021（5）
申请年 2020（6）
专利权人 IND TECHNOLOGY RES INST（6）

Electrode comprises active material layer, active material layer comprises copper, copper-containing alloy, lithium, lithium-containing alloy, conductive layer is provided on top surface of active material layer.

WU W, CHANG C, HUANG Y, CHEN L, FANG C, HUANG Y F

Core-shell structure used in formation of cathode for metal-ion battery, comprises core particle containing lithium cobalt oxide, and organic-inorganic composite layer containing ion-conducting material including modified Prussian blue.

CHEN L, CHEN C, PAN J, LI Y, LU M, YANG C, WANG T, CHEN C C, CHEN L C

Battery comprises positive electrode comprises positive electrode active layer, negative electrode comprises negative active layer and modified layer is provided on negative active layer, modified layer comprises metal fluoride.

FANG C, LI C, CHAO C, WU W, CHANG C, ZHANG Z, ZHAO C, LI J, FANG J, HUANG Y, CHEN L

Positive electrode material comprises active particle and modified layer covering surface of the active particle, modified layer is reaction product of composition, composition comprises ionic conductive ceramic compound , Positive electrode material comprises active particle and modified layer covering surface of the active particle, modified layer is reaction product of composition, composition comprises ionic conductive ceramic compound.

HSU J, LI Y, CHEN C, LAI G, CHEN Z, LAI G L, CHEN C C, LI Y H, HSU J M

Lithium battery structure used in lithium batteries, comprises first and metal layers, aluminum or stainless steel foil or copper foil, nickel foil, separator, first and second electrode layers, first functional layer and first composition.

CHEN C, WANG T, CHEN L, WANG Z, CHEN Z

Forming metallization structure for metallizing fine pitch of semiconductor, by forming graphene oxide layer on substrate, modifying graphene oxide layer, and performing metallization process on graphene oxide catalytic layer.

YEN M