国家/地区 中国（3） 美国（3） 欧洲专利局（EPO）（2）
IPC部 G（2） H（2）
IPC大类 G01（2） H01（2）
IPC小类 G01N（2）
IPC G01N027/12（2） G01N033/00（2）
发明人
公开年 2022（3）
申请年 2021（2） 
专利权人 INFINEON TECHNOLOGIES AG（3）

Gas sensor for detection of hydrogen, has cavity that is hermetically sealed except for gas passage structure, and one or more sensor elements are configured to detect presence of one or more gases in cavity.

SCHALLER R M, EBERL M, JOST F, HEBERT M

Discrete or vertical power transistor device e.g. metal oxide semiconductor FET, for integrated circuit, has control electrode whose carbon adjoins dielectric opposite to channel region, where control electrode comprises gate electrode.

STORBECK O, SCHULZE H, SCHLOESSER T, MURI I, SIEMIENIEC R, STOBECK O, SCHLOSSER T

Gas sensing device e.g. chemiresistor gas sensing device for sensing target gas, has signal calibration unit that determines calibrated measurement value based on measurement signal and based on calibration model.

CARBONELLI C, KRUMBEIN U, TRAVAN C, KRUMBANE U