国家/地区 中国（2）
IPC部 G（2） H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC H01L045/00（2）
发明人 XU X（2）
公开年
申请年 2020（2）
专利权人 INST MICROELECTRONICS CHINESE ACAD SCI（2）

Resistive random access memory, has barrier structure set between resistance change layer and upper electrode for performing erasing operation on device, where electron passes through conduction band of barrier structure.

XU X, LI X, DONG D, YU J, LV H

Memristor for memristor-based neural morphology calculation chip, has barrier layer located on functional layer, and upper electrode layer that is located on barrier layer, where functional layer is resistive layer.

LIU M, LV H, ZHENG X, LI X, DONG D, YU J, XU X