国家/地区 韩国（2） 美国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类
IPC
发明人 KIM H（2）
公开年 2014（2）
申请年 2013（2）
专利权人 KIM H（2）

Negative electrode for lithium secondary battery in e.g. portable phone, has graphene layer grown on surface of germanium nanostructure using catalyst-free growth process, where nanostructure includes germanium nanowire and nanoparticle.

CHOI H C, KIM H, KIM H K

Memory device having FET structure, comprises graphene switching device having source, drain and gate electrodes and including Schottky barrier between drain electrode and channel in direction from source electrode toward drain electrode.

SEO D, KIM H, CHUNG H, PARK S, BYUN K, SONG H, HEO J, KIM H J, CHUNG H J, PARK S J, BYUN K E, SONG H J, HEO J S