国家/地区 美国（2）
IPC部 B（2）
IPC大类
IPC小类
IPC
发明人 KIM S（2）
公开年 2013（2）
申请年
专利权人 KIM S（2）

Manufacture of graphene oxide reduced material for forming electrode for silicon-based semiconductor, involves synthesizing graphite oxide flakes from graphite flakes and forming graphene oxide dispersion solution.

JEONG S, LEE G, HAN J, JEONG H, KIM S, HAN J T, JEONG H J, JEONG S Y, KIM S H, LEE G W

Graphene electrical wire, has metal core having shape of fiber, and graphene layer synthesized on outer surface of metal core by chemical vapor deposition and produced by exfoliation.

KIM K, KIM Y K, KIM S