国家/地区 韩国（4）
IPC部 B（4） C（4）
IPC大类 B01（4）
IPC小类 B01J（4）
IPC C01B031/02（4） C23C016/26（3） B01J019/08（2）
B01J023/755（2）
发明人 CHOI I S（2） LEE K J（2） SEOK W J（2）
公开年 2013（3）
申请年 2011（2）  2012（2） 
专利权人 KOREA ADVANCED INST SCI TECHNOLOGY（4）

Device, useful for producing graphene for transistor, comprises chamber with space for processing substrate, substrate support, gas supply, light source, focusing unit, and unit for transferring formed graphene layer on substrate.

BYOUNG W J, BYUNG J C, SEOK W J

Manufacture of graphene involves forming carbon-doped metal substrate, melting carbon-doped metal substrate by laser beam, cooling substrate and moving carbon-doped metal substrate in cooling phase.

LEE K J, CHOI I S

Producing graphene comprises doping carbon in metallic board, fusing board with carbon by irradiation, cooling fused metallic board, where carbon moves to metal board surface after cooling and growing grapheme on metal board surface.

LEE K J, CHOI I S

Manufacture of graphene for e.g. touch screen, involves loading substrate having catalyst layer into chamber, evaporating, supplying carbon source gas, heating in primary portion of catalyst layer, dissolving carbon component, and cooling.

JEON S, LEE J, OH S, RAN O S, SEOP L J, U JEON S, JIN S L, SE R O, SEOK W J