国家/地区 世界知识产权组织（4）
IPC部 C（4） B（3） H（2）
IPC大类 C23（4） C01（3） H01（2）
IPC小类 C23C（4）
IPC C23C016/26（4） C01B031/02（3） C23C016/44（2）
发明人 JEON S（2） LEE J（2） OH S（2）
公开年 2012（2）
申请年 2012（2） 
专利权人 KOREA ADVANCED INST SCI TECHNOLOGY（4）

Manufacture of graphene for top-gate FETs, involves forming graphene layer on base substrate, attaching target substrate onto layer, and separating graphene layer from base substrate to transfer graphene layer onto target substrate.

CHO B, KIM T, SHIN W, YOON T, BYUNG J C, TAE S Y, TAEK S K, WOO C S

Manufacture of graphene used for e.g. touch screen, involves forming transition metal catalyst layer on substrate, supplying carbon source vapor to chamber and segregating graphene from carbon component in catalyst-layer surface.

JEON S, LEE J, OH S

Manufacture of graphene for e.g. touch screen, involves loading substrate having catalyst layer into chamber, evaporating, supplying carbon source gas, heating in primary portion of catalyst layer, dissolving carbon component, and cooling.

JEON S, LEE J, OH S, RAN O S, SEOP L J, U JEON S, JIN S L, SE R O, SEOK W J

Three-dimensional nanostructure used for field-emitting device, is obtained by laminating graphene film and nano-material chosen from nanowires, nanotubes, nanorods, nanoneedles and nanoparticles.

KIM S O, LEE W J, LEE D H, HAN T H, KIM J E, LEE J A, LEE K J