国家/地区 美国（5）
IPC部 H（4） B（3） C（2）
IPC大类 H01（4） B82（3） C01（2）
C23（2）
IPC小类 H01L（4） B82Y（3） C01B（2）
C23C（2）
IPC H01L029/78（3） B82Y099/00（2） C01B031/02（2）
C23C016/26（2） H01L021/336（2） H01L029/786（2）
发明人 CHO B J（3）
公开年 2012（5）
申请年 2012（3）  2011（2） 
专利权人 KOREA ADVANCED INST SCI TECHNOLOGY（5）

Graphene electronic device e.g. FET, has graphene channel layer formed on gate insulating layer, source electrode formed on end of graphene channel layer, and drain electrode formed on another end of graphene channel layer.

SONG H, CHO B, SEO S, SHIN W, SONG H J, CHO B J, SEO S A, SHIN W C, SONG C, SIN W

Floating gate- or charge trap-type non-volatile memory device includes gate electrode made of graphene.

CHO B J, PARK J K

Manufacture of graphene used for e.g. touch screen, involves forming transition metal catalyst layer on substrate, supplying carbon source vapor to chamber and segregating graphene from carbon component in catalyst-layer surface.

JEON S, LEE J, OH S

Graphene device comprises a source and a drain, formed on a substrate, a graphene channel formed on the substrate between the source and the drain, and a gate formed on a dielectric layer on the graphene channel.

CHO B J, MUN J H

Manufacture of transparent graphene film for device e.g. display, involves forming graphene oxide thin film on substrate, performing chemical reduction, and carrying out secondary thermal reduction and nitrogen doping.

KIM S O, HWANG J O, LEE D H