国家/地区 韩国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC H01L021/02（2）
发明人 HONG S K（2）
公开年 2018（2）
申请年 2017（2） 
专利权人 KOREA ADVANCED SCI TECHNOLOGY INST（2）

Manufacturing method for graphene-silicone fusion electric circuit element, involves forming passivation oxide layer on upper portion of silicon transistor, and through-hole passing through the passivation oxide layer is formed.

CHO B J, HONG S K, KIM C S

Manufacturing method of graphene nanoribbon used for producing up gate-type FET, involves forming reaction inhibiting layer on graphitized metal catalyst thin film, and arranging carbon source to grow graphene nanoribbons.

CHO B J, HWANG W S, HONG S K, BONG J H