国家/地区 韩国（2）
IPC部
IPC大类
IPC小类
IPC
发明人
公开年 2020（2）
申请年 2019（2）
专利权人 KOREA INST CERAMIC ENG TECHNOLOGY（2）

Analyzing physical shape of graphene, comprises preparing silicon substrate having fine grooves, preparing specimen by forming graphene and metal coating film on silicon substrate, and observing specimen in scanning electron microscope.

HUN H S, CHOI K, AN W, KIM S T, LEE M, KIM H G

Manufacture of beta-gallium trioxide thin film layer for semiconductor device, involves stacking graphene layer onto sacrificial layer formed on carrier substrate, and transferring beta-gallium trioxide nano-flake seeds by taping method.

JEON D W, RA Y, KIM S, LEE Y J, HEE H, LIM T Y, KIM J H, CHOI Y J