国家/地区 美国（4） 韩国（3） 中国（2）
IPC部 C（3） B（2） H（2）
IPC大类 C01（3） B82（2） H01（2）
IPC小类 C01B（3） B82Y（2） H01L（2）
IPC C01B031/02（3） C01B031/04（3） B82Y030/00（2）
B82Y040/00（2）
发明人
公开年 2012（4）
申请年 2012（4）
专利权人 KOREA INST SCI TECHNOLOGY（4）

Graphene electronic device e.g. FET, has graphene channel layer formed on gate insulating layer, source electrode formed on end of graphene channel layer, and drain electrode formed on another end of graphene channel layer.

SONG H, CHO B, SEO S, SHIN W, SONG H J, CHO B J, SEO S A, SHIN W C, SONG C, SIN W

Fabricating graphene-controlled nano-graphite, used as basic material for e.g. lithium-ion battery electrode, comprises preparing graphene powders and fabricating graphene-controlled nano-graphite through heat treatment of graphene powders.

LEE J K

Manufacture of graphene used for e.g. touch screen, involves forming transition metal catalyst layer on substrate, supplying carbon source vapor to chamber and segregating graphene from carbon component in catalyst-layer surface.

JEON S, LEE J, OH S

Fabricating graphene thin film involves making graphene by reducing graphene oxide using sulfonyl hydrazide-based reducing agent, forming graphene dispersed solution by dispersing graphene into organic solvent, and applying solution to film.

NA S I, KIM D Y, KOO H Y, YUN J M, YEO J S, KIM J K