国家/地区 韩国（2）
IPC部 C（2）
IPC大类
IPC小类
IPC
发明人 LIM S H（2）
公开年 2013（2）
申请年
专利权人 KOREA INST SCI TECHNOLOGY（2）

Manufacturing boron-doped reduced graphene, useful as semiconductor with p-type characteristics, comprises adding boron oxide to graphene oxide, removing solvent from resulting solution to obtain solid mixture, and heating the solid mixture.

KIM H, DA YOUNG Y, PARK M, LIM S H, GON S J, LEE S S

Thermal conductive material for electronic packaging, is made of thermal conductive hollow particles chosen from carbon nanotube, graphene, graphite nanosheet, aluminum nitride, boron nitride and aluminum oxide, in polymer resin.

LEE S S, KIM J K, LIM S H, PARK M, KIM H, SU L S, GYEONG K J, HO I S, SUK K H