国家/地区 韩国（4）
IPC部 C（3） H（2）
IPC大类 C01（2） H01（2）
IPC小类 C01B（2）
IPC C01B031/02（2）
发明人 KIM H S（2）
公开年 2015（4）
申请年 2013（4）
专利权人 KOREA INST SCI TECHNOLOGY（4）

Manufacture of graphene-zinc oxide complex used in manufacture of piezoelectric element, involves dispersing graphene in solvent, seeding by adding zinc oxide precursor, adding e.g. tetramine, and growing zinc oxide on graphene.

KIM S Y, KIM H S, YANG C M, YU J, JUNG Y C, LEE H S

Photoelectrode for photoelectrochemistry cell, has semiconductor layer formed with gallium nitride group alloy, where gallium nitride group alloy is located on surface of substrate, and graphene layer located on semiconductor layer.

HA J S, LEE S H, BAE H J

Producing graphene useful for manufacturing pulse laser resonator of pulse laser, comprises providing a substrate to grow graphene by depositing a metal film on a transparent supporting member, and growing by laser irradiating the substrate.

SONG Y W, PARK J H, DEBNATH P

Conducting compound for flexible electric component, has main portion that is comprised with polymer infiltrated within pore of reduction graphene oxide board structure.

KIM T A, LEE S S, PARK M, KIM H S, PYO J B, LIM S H, SON J G