国家/地区 中国（4）
IPC部 B（4）
IPC大类 C01（4） B01（2） B82（2）
C23（2） H01（2）
IPC小类 C01B（4）
IPC C01B031/04（4） C01B031/02（3） B01J019/18（2）
B82Y040/00（2） C01B032/182（2） C23C016/26（2）
发明人 MOON J（4） JUNG M（3）
公开年 2014（3）
申请年 2013（2） 
专利权人 LG ELECTRONICS INC（4）

Preparation of multi-doped graphene involves mixing metal-based dopant and at least one organic-based dopant to prepare doping solution, stacking graphene layer on substrate, and doping graphene layer with doping solution.

JUNG M, BYUN N, MOON J, MYNGHEE J, NAMI B, JINSAN M, WEN Z

Apparatus for manufacturing graphene comprises a first chamber for supplying a carbon source under a first condition, a second chamber for supplying a carbon source, and a feeder for continuously supplying a catalyst metal.

MOON J, CHOI M, JUNG M

Formation of graphene for electronic device, involves forming graphene layer on catalytic metal layer, forming organic-inorganic hybrid film in uncured state on graphene layer, and curing.

MOON J, JUNG K, KANG E, KANG O, JEONG G, KANG E S

Manufacture of graphene involves loading catalytic metal layer into chamber, applying tensile force to catalytic metal layer, supplying carbon source to chamber, applying tension, and forming graphene on catalytic metal layer.

MOON J, RHO J, PARK S, KIM T, HONG B, PARK W, JUNG M, KIM T H, ROH J