国家/地区 韩国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人
公开年 2016（2）
申请年
专利权人 LG ELECTRONICS INC（2）

Doping method of graphene for manufacturing graphene composite electrode and graphene structure, involves forming precursor polymer layer for doping on substrate, and positioning graphene on substrate.

MOON J, PARK W, PARK S, JO I, HONG B, SAN MOON J, SU C I, BAE P W, BEOM P S, HUI H B, ZHENSHAN W, WONBAE P, SUBEOM P, INSU J, BYUNGHEE H

Method for producing metal chalcogenide thin film on flexible substrate, involves supplying transition metal precursor and chalcogen-containing gas onto graphene formed on substrate, so as to form metal chalcogenide thin film.

CHOI M, LEE C, KIM Y