国家/地区 美国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人
公开年
申请年 2022（2）
专利权人 MICRON TECHNOLOGY INC（2）

Graphene-containing-material for use in integrated assembly, comprises transition metal provided between graphene planes to improve out-of-plane-conductivity.

SARKAR S

Electronic system comprises semiconductor device including semiconductor device structure comprising 2D material structure including stack having substantially crystalline-defect-free forms of carbide and carbonitride, and peripheral circuitry electrically connected to semiconductor device.

PANDEY S C, MEADE R E