国家/地区 美国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人
公开年 2015（2）
申请年
专利权人 MICRON TECHNOLOGY INC（2）

Semiconductor device structure such as transistor, has channel region between first and second sides of mesa such that gate on side of mesa comprises gate insulator and gate conductor comprises graphene that overlies gate insulator.

SANDHU G S

Graphene structure for FET device, has graphene-lattice matching material placed over portion of graphene material, where graphene-lattice matching material comprises unit cell vector in alignment with lattice vector of graphene material.

MEADE R E, PANDEY S C