国家/地区 美国（2）
IPC部 B（2） H（2）
IPC大类 B82（2） H01（2）
IPC小类 B82Y（2） H01L（2）
IPC B82Y010/00（2） H01L029/78（2）
发明人 SANDHU G S（2）
公开年 2016（2）
申请年 2016（2） 
专利权人 MICRON TECHNOLOGY INC（2）

Semiconductor device structure such as vertical field effect transistor (VFET) structure, has graphene having thickness of one atom adjacent insulator material and spans entirety of height and width of insulator material.

SANDHU G S

Integrated circuitry component e.g. switch, for use in various applications, has graphene structure placed between overlapping regions, where material is placed between graphene structure and projections within overlapping regions.

SANDHU G S