国家/地区 中国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人 WANG X（2）
公开年
申请年 2013（2）
专利权人 NAT CENT NANOSCIENCE TECHNOLOGY CHINA（2）

Method for growing germanium quantum point for preparing graphene-germanium quantum point composite material for e.g. LED, involves forming graphene layer on thin film, and performing graphene layer and germanium thin film annealing process.

LI Z, BAI B, YANG X, WANG X, XU Y, DAI Q, QIU X

Graphene doping involves forming polymethyl methacrylate film on graphene device, selecting doping graphene region and introducing graphene to selected region with electroconductive needle through atom force microscope.

QIU X, WANG X, WANG R, XU Y, CHENG Z, JIANG X