国家/地区 中国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人 WANG F（2）
公开年 2018（2）
申请年 2018（2） 
专利权人 NAT CENT NANOSCIENCE TECHNOLOGY CHINA（2）

Quasi-Van der Waals contact structure based two-dimensional semiconductor device, has van der Waals contact structure provided with contact electrode, graphene nanosheet and metal that is stacked and evaporated on graphene nanosheet.

HE J, WANG J, WANG F

Asymmetric Waals heterojunction device for preparing e.g. transistors, comprises graphene nanosheets, hexagonal boron nitride nanosheets, molybdenum disulfide nanosheets and molybdenum molybdenum nanosheets.

HE J, CHENG R, WANG F