国家/地区 中国（2）
IPC部
IPC大类
IPC小类
IPC
发明人 ZHOU D（2）
公开年 2012（2）
申请年
专利权人 NAT CENT NANOSCIENCE TECHNOLOGY CHINA（2）

Method for forming graphene oxide pattern and graphene pattern, involves enabling contact between graphene oxide solution and patterning polydimethoxy silane stamp and drying, followed by enabling contact between dried stamp.

CHENG Q, HAN B, SUN S, WANG T, WU C, ZHOU D

Forming graphene oxide pattern, comprises e.g. preparing substrate, preparing hydrophobic self-assembly monomolecular film on surface of substrate, and exposing the film by mask to ultraviolet lamp, and removing mask after exposure.

CHENG Q, ZHOU D, WU C, SUN S, HAN B